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"Power Star" DRT Series High Withstand Voltage IGBT Drive Transformer
动力星DRT系列高耐压igbt-1.png
"Power Star" DRT Series High Withstand Voltage IGBT Drive Transformer
These two series of products are high withstand voltage drive transformers. They have the characteristics of a compact structure, and their most notable feature is their extremely high electric strength. In addition, DRT810 series products have two spare input channels on the primary side. Each channel is connected with a diode, and the secondary side has a built-in shaping circuit. When in use, a diode can be connected in series with the thyristor gate to prevent negative polarity gate pole current. Additionally, if you want to measure the thyristor gate current, you can connect a measuring resistor to the secondary side and use the secondary output point as the measuring point to measure the voltage across the resistor, which allows you to determine the magnitude of the gate current.
General Technical Specifications for Standard Products:



1. Features:

 Low coupling capacitance makes it have high anti-interference ability;

Small leakage inductance ensures better output pulse waveform;

No switching delay, high instantaneous transmission power;

 High electric strength, safe and reliable;

Fully enclosed, good mechanical and environmental resistance;

 Small size, compact structure, beautiful appearance, pin-hole installation, easy to use.

2. Ambient Conditions:

 Ambient temperature: -40 ℃ ~+85 ℃;

 Relative humidity:  90% at 40 ℃;

 Atmospheric pressure: 860~1060mbar (about 650~800mmHg).

3. Insulation and heat resistance grade : Class B (130 ℃ )

4. Safety features:

① Insulation resistance: greater than 1000MΩ under normal conditions;

② Flame retardancy: in line with UL94-V0 level.

5. Comparison table of typical characteristics of various models of DRT series high withstand voltage drive transformers:

SN

Model

Ratio

(u)

∫udt

(μVs )

Withstand voltage

VP

(kV)

Dimensions

Tolerance ±0.5(mm) 3

weight

1

DRT809/101A

1:1

4000

15

43 x 43 x 26

95

2

DRT809/201A

2:1

8000

15

43 x 43 x 26

90

3

DRT809/301A

3:1

12000

15

43 x 43 x 26

90.5

4

DRT810/101A

1:1

2000

15

90 x 60 x 50

335

5

DRT810/201A

2:1

2000

15

90 x 60 x 50

335

6

DRT810/301A

3:1

2000

15

90 x 60 x 50

335

Note:

① The parameters given in the above table are typical values measured at room temperature.

② The meaning of each parameter:

u— transformation ratio = Ⅰ:Ⅱ:Ⅲ

VP — the effective value of the dielectric strength test voltage applied between each winding, and the duration is 60s

∫udt— Rated volt-microsecond product ≈V1 ·tn ( its value basically remains unchanged within a certain frequency range )

LP —coil primary inductance f=1000Hz V=0.3V

LS —Leakage inductance (measured after the secondary winding is short-circuited) f=1000Hz V=1V

CK —distributed capacitance f=1000Hz V=1V

6. Selection Guide:

① First according to the operating voltage V of the system. ( effective value ) to determine the required dielectric strength Vp, which can be selected according to the recommendation in Table 1 :

    Table 1 :

Operating Voltage

Vo

220V

380V

500V

800V

Dielectric strength

Vp

1.9kV

3.1kV

4.5kV

6kV

② Select the transformation ratio according to the power supply voltage of the control stage and the driving voltage required by the IGBT.

For example: if the primary pulse amplitude is 15V, in order to drive the IGBT reliably, it is necessary to select a driving transformer with a transformation ratio of 1:1, such as DRT801/101A, DRT801/111B or DRT802/101A. If the primary pulse amplitude is 24-30V, in order to drive the IGBT reliably, it is necessary to select a driving transformer with a transformation ratio of 2:1, such as DRT801/201A, DRT801/211B or DRT802/201A.

③ According to the volt-microsecond product (∫udt) and the frequency of the driving pulse ( f p), the type selection is based on the principle that the volt-microsecond product of the known driving pulse should be less than or equal to the rated volt-microsecond product of the DRT drive transformer within the frequency range.

For example: if the frequency of the modulating pulse is 20k Hz, the pulse amplitude is 15V, and the pulse width is 20μs, then its volt-microsecond product ∫udt=15×20=300 μVs, according to the known volt-microsecond product of the driving pulse The principle selection should be less than or equal to the rated volt-microsecond product of the DRT drive transformer in the frequency range, and the DRT802 series products can be selected. If the frequency of the modulated pulse is 50kHz, the pulse amplitude is 24V, and the pulse width is 10μs, then its volt-microsecond product ∫udt=24×10=240μVs, according to the known driving pulse, the volt-microsecond product should be less than or equal to this frequency The principle selection of the rated volt-microsecond product of the DRT drive transformer within the range, the DRT801 series products can be selected.

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